A Review of Gate Driving and Soft Switching in Silicon Carbide Dual Active Bridge Converters for Electric Vehicle Charging
Neha Singh *
Department of Electronics and Communication Engineering, Govind Ballabh Pant University of Agriculture and Technology, Pantnagar, Uttarakhand 263145, India.
Mitesh Upreti
Department of Electronics and Communication Engineering, Govind Ballabh Pant University of Agriculture and Technology, Pantnagar, Uttarakhand 263145, India.
Deep Sehgal
Semiconductor Laboratory (SCL), Ministry of Electronics and Information Technology (MeitY), India.
*Author to whom correspondence should be addressed.
Abstract
Aims: This review examines the interaction of device commutation, gate-driving timing, modulation and protection in silicon carbide (SiC) dual active bridge (DAB) converters intended for electric vehicle charging.
Study Design: A focused narrative review of published journal evidence was undertaken.
Methodology: Journal studies were compared according to converter topology, operating conditions, experimental or modelling evidence, and limitations affecting the transfer of findings. The synthesis focused on nonlinear output capacitance, dead-time requirements, zero-voltage switching (ZVS), current stress, gate-driver behaviour, transformer balance and fault protection.
Findings: Favourable commutating-current polarity is insufficient to demonstrate complete ZVS. Device capacitance and the magnitude and duration of transition current must be considered alongside physical propagation delays to determine whether voltage transitions finish before channel turn-on. Modulation strategies that extend the ZVS range can increase circulating current and associated losses, whereas current minimisation may reduce commutation margin. Studies of active gate driving and short-circuit protection address different aspects of switching behaviour and do not establish converter-level efficiency or safety without corresponding measurements. Dead-time adjustments also interact with transient transformer current imbalance. Reported prototype efficiencies and switching-loss reductions remain dependent on hardware and operating conditions.
Conclusion: The review proposes a bounded assessment combining event-level commutation, total loss, transformer flux balance and fault interruption. Matched-hardware comparisons across charging conditions and validation during operating-mode transitions remain necessary to evaluate the usefulness of this approach.
Keywords: Silicon carbide, dual active bridge, electric vehicle charging, zero-voltage switching, gate-driver timing, dead time, nonlinear output capacitance, transformer DC bias, current stress, short-circuit protection